An novel thin layer SOI copyright-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed.The potential of the P-shield layer is clamped by two series-connected diodes.Therefore, the reverse voltage is sustained by the P-shield/Ndrift junction rather than the P-base/CS junction during the
Abstract Integrating ferroelectric negative capacitance (NC) into the field-effect transistor (FET) promises to break fundamental limits of power dissipation known as Boltzmann tyranny.However, realizing the stable static negative capacitance in the non-transient non-hysteretic regime remains a daunting task.The problem stems from the lack of under
The name of Otto Redlich is generally remembered as co-author of one of most used equations of state for the calculation of volumetric and thermodynamic properties hollowbet of pure substances and their mixtures.Nevertheless, he made also important contributions in different areas of chemistry and chemical engineering.Pursuits of race and religious